onsemi FGD3050G2V
N-Channel IGBT
| Part No. | FGD3050G2V |
|---|---|
| Datasheet | FGD3050G2V Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 300 mJ at TJ = 25°C● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● These Device is Pb−Free and are RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug Application
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 500 20 300 V V mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 180 mJ IC25 IC110 VGEM PD TJ Collector Current Continuous at VGE = 4.0 V, TC = 25°C Collector Current Continuous at VGE = 4.0 V, TC = 110°C Gate to Emitter Voltage Continuous 32 27 ±10 Power Dissipation Total, TC = 25°C 150 Power Dissipation Derating, for TC > 25°C 1.1 Operating Junction Temperature Range −40 to +175 A A V W W/°C °C TSTG TL Storage Junction Temperature Range Max. Lead Temperature for Soldering (Leads at 1.6 mm from case for 10 s) −40 to +175 300 °C °C TPKG Max.
