onsemi FQA24N60
This N−Channel Enhancement Mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQA24N60 |
|---|---|
| Datasheet | FQA24N60 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.FEATURES
● 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A● Low Gate Charge (Typ. 110 nC)
● Low Crss (Typ. 56 pF)
● 100% Avalanche Tested
● This Device is Pb−Free
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted.) Symbol Parameter Value Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain to Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate to Source Voltage Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 23.5 14.9 94 ±30 1300 23.5 31 4.5 V A A V mJ A mJ V/ns PD Power Dissipation − (TC = 25°C) − Derate Above 25°C 310 W 2.5 W/°C TJ,TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for 300 °C Soldering Purpose, 1/8” from Case for 5 Seconds Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
