onsemi FQB12P20
This advanced technology has been especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.| Part No. | FQB12P20 |
|---|---|
| Datasheet | FQB12P20 Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology.FEATURES
● −11.5 A, −200 V, RDS(on) = 0.47 W @ VGS = −10 V● Low Gate Charge (Typical 31 nC)
● Low Crss (typical 30 pF)
● Fast Switching
● 100% Avalanche Tested
● Improved dv/dt Capability
● These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Symbol Parameter FQB12P20 Unit VDSS Drain−Source Voltage −200 V ID Drain Current − Continuous (TC = 25°C) −11.5 A − Continuous (TC = 100°C) −7.27 A IDM VGSS EAS IAR EAR dv/dt Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) −46 +30 810 −11.5 12 −5.5 A V mJ A mJ V/ns PD Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) − Derate above 25°C TJ, TSTG Operating and Storage Temperature Range 3.13 120...
