onsemi FQP27P06
This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQP27P06 |
|---|---|
| Datasheet | FQP27P06 Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.FEATURES
● −27 A, − 60 V, RDS(on) = 70 mW (Max.) @ VGS = −10 V, ID = −13.5 A● Low Gate Charge (Typ. 33 nC)
● Low Crss (Typ. 120 pF)
● 100% Avalanche Tested
● 175°C Maximum Junction Temperature Rating GDS TO−220−3LD CASE 340AT MARKING DIAGRAM &Z&3&K FQP 27P06
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise noted) Symbol Parameter FQP27P06 Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) −60 −27 −19.1 −108 ±25 560 −27 12 −7.0 V A A V mJ A mJ V/ns PD Power Dissipation (TC = 25°C) − Derate Above 25°C 120 W 0.8 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +...
