FQU2N60C Datasheet PDF

FEATURES

● 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A
● Low Gate Charge (Typ. 8.5 nC)
● Low Crss (Typ. 4.3 pF)
● 100% Avalanche Tested
● These Devices are Halid Free and are RoHS Compliant

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Symbol Rating Value Unit VDSS Drain−Source Voltage 600 V ID Drain Current − Continuous (TC = 25°C) 1.9 A − Continuous (TC = 100°C) 1.14 IDM Drain Current − Pulsed (Note 1) 7.6 VGSS Gate−Source Voltage ±30 EAS Single Pulsed Avalanche Energy (Note 2) 120 IAR Avalanche Current (Note 1) 1.9 EAR Repetitive Avalanche Energy (Note 1) 4.4 dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 A V mJ A mJ V/ns PD Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) − Derate above 25°C 2.5 W 44 W 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to °C +150 TL Maximum Lead Temperature for Soldering Purposes, 1/8” (from case for 5 seconds) 300 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

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