onsemi KSA1156
PNP Silicon Transistor
| Part No. | KSA1156 |
|---|---|
| Datasheet | KSA1156 Download |
| Manufacturer |  onsemi |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High Breakdown Voltage● Low Collector Saturation Voltage
● High Speed Switching
● This is a Pb−Free Device
APPLICATIONS
● High Voltage Switching● Low Power Switching Regulator
● DC−DC Converter
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Symbol Parameter Ratings Units VCBO Collector−Base Voltage −400 V VCEO Collector−Emitter Voltage −400 V VEBO Emitter−Base Voltage −7 V IB Base Current −0.25 A IC Collector Current (DC) −0.5 A ICP Collector Current (Pulse) −1 A PC Collector Dissipation, TA = 25°C TC = 25°C 1 W 10 TJ Junction Temperature 150 °C TSTG Storage Temperature −55 ~ 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET 1. Emitter 2.Collector 3.Base TO−126−3LD CASE 340AS MARKING DIAGRAM &3 A1156−Y &3 = 3−Digit Date Code A1156−Y = Specific Device Code ORDERING INFORMATION Device KSA1156YS Package TO−126−3LD (Pb−Free) Shipping 2000 Units / Bulk Bag © Semiconductor Components Industries, LLC, 2000 1 August, 2023 − Rev.
