onsemi MBD301G
Silicon Hot-Carrier Diodes
FEATURES
● Extremely Low Minority Carrier Lifetime − 15 ps (Typ)● Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
● Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25°C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Symbol Value Unit VR 30 V IF 200 (Max) mA PF MW 280 200 Derate above 25°C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G mW/°C 2.8 2.0 Operating Junction Temperature Range TJ −55 to °C +125 Storage Temperature Range Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 30 VOLTS SILICON...