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MBD301G Datasheet PDF

onsemi MBD301G

Silicon Hot-Carrier Diodes

Part No. MBD301G
Datasheet MBD301G Download
Manufacturer
onsemi
Description Silicon Hot-Carrier Diodes
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MBD301G datasheet page 1 preview

FEATURES

● Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
● Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
● Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
● S Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25°C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Symbol Value Unit VR 30 V IF 200 (Max) mA PF MW 280 200 Derate above 25°C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G mW/°C 2.8 2.0 Operating Junction Temperature Range TJ −55 to °C +125 Storage Temperature Range Tstg −55 to °C +150 Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 30 VOLTS SILICON...
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