onsemi MJ4502
High-Power PNP Transistor
| Part No. | MJ4502 |
|---|---|
| Datasheet | MJ4502 Download |
| Manufacturer |  onsemi |
| Description | High-Power PNP Transistor |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain − hFE = 25 −100 @ IC = 7.5 A● Excellent Safe Operating Area
● Complement to the NPN MJ802
● Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Symbol VCER Value 100 Unit Vdc Collector-Base Voltage VCB 100 Vdc Collector-Emitter Voltage VCEO 90 Vdc Emitter-Base Voltage VEB 4.0 Vdc Collector Current IC Base Current IB Total Device Dissipation @ TC = 25_C PD Derate above 25_C 30 Adc 7.5 Adc 200 W 1.14 W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 0.875 _C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DATA SHEET 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS − 200 WAT...
