onsemi MJE3055
COMPLEMENTARY SILICON POWER TRANSISTORS
| Part No. | MJE3055 |
|---|---|
| Datasheet | MJE3055 Download |
| Manufacturer |  onsemi |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current 5.0 10 6.0 75 Total Power Dissipation @ TC = 25_C Derate above 25_C MJE3055T, MJE2955T Operating and Storage Junction Temperature Range PD† Watts W/_C 0.6 TJ, Tstg – 55 to + 150 . . . designed for use in general–purpose amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS _C THERMAL CHARACTERISTICS Characteristic Symbol θJC Max Unit CASE 221A–06 TO–220AB Thermal Resistance, Junction to Case 1.67 _C/W †Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 dc 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0 ms 1.0 ms 100 µs TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25°C (D = 0.1) 20 30 7.0 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 50 60 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
