MJE3055 - Plastic-Encapsulate Transistors

Galaxy Microelectronics

Key Features

DC Current Gain Specified to 10A.
High Current Gain. Pb Lead-free Production specification MJE3055 TO-220AB.

MJE3055 plastic-encapsulate transistors by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	MJE3055
Manufacturer	Galaxy Microelectronics
File Size	154.65 KB
Description	Plastic-Encapsulate Transistors
Datasheet	MJE3055 Datasheet

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Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Production specification MJE3055 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation @TC=25℃ Junction and Storage Temperature 60 V 5V 10 A 6A 75 W -55 to +150 ℃ X024 Rev.A www.gmesemi.com 1 Production specification Plastic-Encapsulate Transistors MJE3055 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.