| Part Number | MJE3055 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 3 . = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEO Collector Cut-off Current (IB = 0) VCE = 30 V ICEX Collector Cut-off Current (VBE = 1.5V) VCE = 70 V Tcase = 150oC ICBO Collector Cut-off Current (IE = 0) VCBO = 70 V Tcase = 150oC IEBO Emitter Cut-off Current (. |
MJE3055 Datasheet and Specifications PDF
The MJE3055 is a COMPLEMENTARY SILICON POWER TRANSISTORS.
| Part Number | MJE3055 Datasheet |
|---|---|
| Description | (MJE2955 / MJE3055) POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
| Part Number | MJE3055 Datasheet |
|---|---|
| Description | Plastic-Encapsulate Transistors |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Plastic-Encapsulate Transistors
FEATURES
DC Current Gain Specified to 10A. High Current Gain.
Pb
Lead-free
Production specification
MJE3055
TO-220AB
MAXIMUM RATING operating temperature range.
* DC Current Gain Specified to 10A. * High Current Gain. Pb Lead-free Production specification MJE3055 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO VEBO IC IB PC Tj,Tstg Collector-. |
| Part Number | MJE3055 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 ·Minimum Lot-to-Lot variations for robust device performance and rel. wise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO C. |