MMBD2836LT1G Datasheet | onsemi

Features - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage MMBD2835LT1G, SMMBD2835LT1G Vdc 35 75 Forward Current THERMAL CHARACTERISTICS 100 m Adc Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction- to- Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Rq JA PD 225 m W 1.8 m W/C C/W 300 m W 2.4 m W/C Thermal Resistance, Junction- to- Ambient Rq JA Junction and Storage Temperature TJ, Tstg - 55 to +150 C/W C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be...