onsemi MMBT2907AL
PNP Transistor
FEATURES
● S Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS VCEO VCBO VEBO IC ICM −60 −60 −5.0 −600 −1200 Vdc Vdc Vdc mAdc mAdc Characteristic Symbol Max Unit Total Device Dissipation − FR− 5 Board PD (Note 1) @TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation − Alumina 25°C Substrate, (Note 2) @TA = Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation − Heat Spreader 25°C or equivalent, (Note 4) @TA = RqJA PD 417 °C/W 350 mW Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.