onsemi MMBT3416LT3
General Purpose Amplifier(NPN Silicon)
MMBT3416LT3 Specifications
- Package : SOT-23-3
- Polarity : NPN
- Current Rating : 100mA
- Terminals : 3
- Collector Base Voltage : 4V
- Collector Emitter Voltage : 40V
- Collector Emitter Saturation Voltage : 300mV
- Max Power Dissipation : 225mW
- Voltage Rating DC : 25V
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | MMBT3416LT3 |
|---|---|
| Datasheet | MMBT3416LT3 Download |
| Manufacturer |  onsemi |
| Description | General Purpose Amplifier(NPN Silicon) |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT3416LT3 = GPELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICBO1 IEBO 40 4.0 — — — — 100 100 Vdc Vdc nAdc nAdc 0.062 in.
