MMBT5088 Datasheet | onsemi

2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C BE TO-92 SOT-23 Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 m A. Absolute Maximum Ratings- TA = 25°C unless otherwise noted Symbol Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 2N5088 2N5089 2N5088 2N5089 - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 30 25 35 30 4.5 -55 to +150 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V V V V V m A °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to...