Datasheet4U Logo Datasheet4U.com

MMBT5088 - Silicon Epitaxial Planar Transistor

Key Features

  • z Excellent HFE Linearity. z Power dissipation. (PC=0.2W). Pb Lead-free MMBT5088/5089.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBT5088 NPN (LOW NOISE TRANSISTOR) Samsung
MMBT5088 NPN General Purpose Amplifier Fairchild
MMBT5088 (MMBT5088 / MMBT5089) NPN GENERAL PURPOSE AMPLIFIER UTC
MMBT5088 Low Noise NPN Transistor WEITRON
MMBT5088 NPN General Purpose Amplifier Kexin

Other Datasheets by Galaxy Microelectronics

Part Number Description
MMBT5089 Silicon Epitaxial Planar Transistor
MMBT5401 PNP Silicon Epitaxial Planar Transistor
MMBT5550 NPN General Purpose Amplifier
MMBT589 PNP General Purpose Transistor
MMBT1616A NPN Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50mA. ORDERING INFORMATION Type No. Marking MMBT5088 MMBT5089 1Q 1R SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage MMBT5088 35 MMBT5089 30 VCEO Collector-Emitter Voltage MMBT5088 30 MMBT5089 25 VEBO IC PC Emitter-Base Voltage Collector Current -Continuous Collector Dissipation 4.