MMBT5089 - Silicon Epitaxial Planar Transistor

Galaxy Microelectronics

Download the MMBT5089 datasheet PDF. This datasheet also covers the MMBT5088 variant, as both devices belong to the same silicon epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

z Excellent HFE Linearity. z Power dissipation. (PC=0.2W). Pb Lead-free MMBT5088/5089.

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MMBT5089 silicon epitaxial planar transistor by Galaxy Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MMBT5088-GME.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MMBT5089
Manufacturer	Galaxy Microelectronics
File Size	155.33 KB
Description	Silicon Epitaxial Planar Transistor
Datasheet	MMBT5089 Datasheet

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Other Datasheets by Galaxy Microelectronics

Part Number	Description
MMBT5088	Silicon Epitaxial Planar Transistor
MMBT5401	PNP Silicon Epitaxial Planar Transistor
MMBT5550	NPN General Purpose Amplifier
MMBT589	PNP General Purpose Transistor
MMBT1616A	NPN Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50mA. ORDERING INFORMATION Type No. Marking MMBT5088 MMBT5089 1Q 1R SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage MMBT5088 35 MMBT5089 30 VCEO Collector-Emitter Voltage MMBT5088 30 MMBT5089 25 VEBO IC PC Emitter-Base Voltage Collector Current -Continuous Collector Dissipation 4.