| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
MMBT5089 | NPN LOW NOISE TRANSISTOR |
Unisonic Technologies |
MMBT5089 | NPN GENERAL PURPOSE AMPLIFIER |
Galaxy Microelectronics |
MMBT5089 | Silicon Epitaxial Planar Transistor |
WEITRON |
MMBT5089 | Low Noise NPN Transistor |
SEMTECH |
MMBT5089 | NPN General Purpose Amplifier |
1Q / 1R B NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.
