MMBT5089 Datasheet and Specifications PDF

The MMBT5089 is a NPN General Purpose Amplifier.

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Part NumberMMBT5089 Datasheet
Manufactureronsemi
Overview 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C C BE TO-92 E SOT-23 B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, ge. herwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Max 2N5088 2N5089 625 5.0 83.3 200 *MMBT5088 *MMBT5089 350 2.8 357 U.
Part NumberMMBT5089 Datasheet
DescriptionNPN LOW NOISE TRANSISTOR
ManufacturerSamsung Semiconductor
Overview . .
Part NumberMMBT5089 Datasheet
DescriptionNPN General Purpose Amplifier
ManufacturerFairchild Semiconductor
Overview 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is d. operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic 2N5088 2N5089 625 5.0 83.3 200 Max *MMBT5088 *MMBT5089 350 2.8 357 Units PD RθJC RθJA Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Am.
Part NumberMMBT5089 Datasheet
DescriptionNPN GENERAL PURPOSE AMPLIFIER
ManufacturerUnisonic Technologies
Overview The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 3 1 2 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number . Derating Factor above TA= 25°C PD 350 mW 2.8 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ra.

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