| Part Number | MMBT5088 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C C BE TO-92 E SOT-23 B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, ge. herwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Max 2N5088 2N5089 625 5.0 83.3 200 *MMBT5088 *MMBT5089 350 2.8 357 U. |
MMBT5088 Datasheet and Specifications PDF
The MMBT5088 is a NPN General Purpose Amplifier.
| Part Number | MMBT5088 Datasheet |
|---|---|
| Description | Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview | Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed f. z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50mA. ORDERING INFORMATION Type No. Marking MMBT5088 MMBT5089 1Q 1R SO. |
| Part Number | MMBT5088 Datasheet |
|---|---|
| Description | Low Noise NPN Transistor |
| Manufacturer | WEITRON |
| Overview | Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Thermal Charact. . |
| Part Number | MMBT5088 Datasheet |
|---|---|
| Description | NPN General Purpose Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is d. operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic 2N5088 2N5089 625 5.0 83.3 200 Max *MMBT5088 *MMBT5089 350 2.8 357 Units PD RθJC RθJA Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Am. |