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MMBT5088 - NPN General Purpose Amplifier

Download the MMBT5088 datasheet PDF. This datasheet also covers the MMBT5089 variant, as both devices belong to the same npn general purpose amplifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Total device dissipation Derate above 25 Thermal resistance, junction to case Thermal resistance, juncti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBT5089-Kexin.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MMBT5088 NPN (LOW NOISE TRANSISTOR) Samsung
MMBT5088 NPN General Purpose Amplifier Fairchild
MMBT5088 (MMBT5088 / MMBT5089) NPN GENERAL PURPOSE AMPLIFIER UTC
MMBT5088 Silicon Epitaxial Planar Transistor GME
MMBT5088 Low Noise NPN Transistor WEITRON

Other Datasheets by Kexin Semiconductor

Part Number Description
MMBT5087 PNP Transistors
MMBT5089 NPN General Purpose Amplifier
MMBT5401 PNP Transistors
MMBT5550 High Voltage Transistors
MMBT5551 NPN Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type TransistIoCrs NPN General Purpose Amplifier MMBT5088,MMBT5089 Features NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Total device dissipation Derate above 25 Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol VCE0 VCBO VEBO IC Tj Tstg PD RèJC RèJA MMBT5088 MMBT5089 30 25 35 30 4.5 100 150 -55 to +150 625 350 5.0 2.8 83.3 200 357 Unit V V V mA mW mW/ /W /W www.kexin.com.