onsemi MMSD103T1
High Voltage Switching Diode
| Part No. | MMSD103T1 |
|---|---|
| Datasheet | MMSD103T1 Download |
| Manufacturer |  onsemi |
| Description | High Voltage Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 Cathode 2 Anode THERMAL CHARACTERISTICS Characteristic Forward Power Dissipation, FR–5 Board (Note 1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range 1. FR–5 = 1.0 0.75 0.062 in. Symbol PF Value 400 3.2 174 492 125 Max –55 to +150 Unit mW mW/°C °C/W °C/W °C °C 1 CASE 425–04, STYLE 1 SOD–123 JS = Specific Device Code MARKING DIAGRAM 2 JS RθJL RθJA TJ Tstg ORDERING INFORMATION Device MMSD103T1 Package SOD–123 Shipping 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value.ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Vol...
