onsemi MMSD103T1G
High Voltage Switching Diode
| Part No. | MMSD103T1G |
|---|---|
| Datasheet | MMSD103T1G Download |
| Manufacturer |  onsemi |
| Description | High Voltage Switching Diode |
| Buy | Stock & Price |
FEATURES
● AEC−Q101 Qualified and PPAP Capable● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Continuous Reverse Voltage VR 250 V Peak Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 625 mA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board PF (Note 1) @ TA = 25C Derate above 25C 400 mW 3.2 mW/C Thermal Resistance, Junction−to−Case RqJL C/W 174 Thermal Resistance, Junction−to−Ambient RqJA C/W 492 Junction and Storage Temperature Range TJ, Tstg −55 to +150 C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in.
