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MMSF3P03HD Datasheet PDF

onsemi MMSF3P03HD

Power MOSFET

Part No. MMSF3P03HD
Datasheet MMSF3P03HD Download
Manufacturer
onsemi
Description Power MOSFET
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MMSF3P03HD datasheet page 1 preview

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) (Note 1.) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (Note 2.) VDSS VDGR VGS ID ID IDM PD 30 Vdc 30 Vdc ± 20 Vdc 4.6 Adc 3.0 50 Apk 2.5 Watts Operating and Storage Temperature Range − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14 mH, RG = 25 Ω) Thermal Resistance − Junction to Ambient (Note 2.) EAS RθJA 567 mJ 50 °C/W Maximum Lead Temperature for Soldering TL Purposes, 1/8″ from case for 10 seconds 260 °C 1. Negative sign for P−Channel device omitted for clarity. 2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 3 AMPERES 30 VOLTS RDS(on) = 100 mW P−Channel D G S MARKING DIAGRAM S...
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