onsemi MMSF5N02HD
Power MOSFET
| Part No. | MMSF5N02HD |
|---|---|
| Datasheet | MMSF5N02HD Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ TA = 25°C (Note 1.) VDSS VDGR VGS ID ID IDM PD 20 Vdc 20 Vdc ± 20 Vdc 8.2 Adc 5.6 41 Apk 2.5 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 6.0 mH, RG = 25 Ω) Thermal Resistance − Junction to Ambient (Note 1.) EAS RθJA 675 mJ 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 5 AMPERES 20 VOLTS RDS(on) = 25 mW N−Channel D G S MARKING DIAGRAM SO−8 8 CASE 751 STYLE 13 1 S5N02 LYWW L = Location Code Y...
