onsemi MMSF5P02HD
Power MOSFET
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) (Note 1) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous 1″ SQ. FR−4 or G−10 PCB 10 seconds Thermal Resistance − Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current − Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 2) Minimum FR−4 or G−10 PCB 10 seconds Thermal Resistance − Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current − Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 W) 1. Negative sign for P−Channel devices omitted for clarity. 2. Repetitive rating; pulse width limited by maximum junction temperature. Symbol VDSS VDGR VGS RTHJA PD ID ID IDM RTHJA PD ID ID IDM TJ, Tstg...