onsemi NTA4151P
P-Channel MOSFET
FEATURES
● Low RDS(on) for Higher Efficiency and Longer Battery Life● Small Outline Package (1.6 x 1.6 mm)
● SC-75 Standard Gullwing Package
● ESD Protected Gate
● These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● High Side Load Switch● DC-DC Conversion
● Small Drive Circuits
● Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.
MAXIMUM RATINGS
(TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State VDSS VGS ID −20 V 6.0 V −760 mA Power Dissipation (Note 1) PD SC-75 Steady State SC-89 mW 301 313 Pulsed Drain Current tp =10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) IDM TJ, TSTG IS TL 1000 mA −55 to C 150 −250 mA 260 C Gate-to-Source ESD Rating − (Human Body Model, Method 3015) ESD 1800 V THERMAL RESISTANCE RATING...