onsemi NTMFS4H01N
Single N-Channel Power MOSFET
FEATURES
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● Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers Point of Load VGS 4.5 V 10 V MAX RDS(on) 0.97 mW 0.7 mW TYP QGTOT 39 nC 85 nC
APPLICATIONS
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● PIN CONNECTIONS SO8−FL (5 x 6 mm)
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 58 Apk, L = 0.3 mH) Drain to Source dV/dt Maximum Junction Temperature Storage Temperature Range Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) Symbol VDS...