onsemi NTMS10P02R2
P-Channel Power MOSFET
FEATURES
● Ultra Low RDS(on)● Higher Efficiency Extending Battery Life
● Logic Level Gate Drive
● Miniature SOIC−8 Surface Mount Package
● Diode Exhibits High Speed, Soft Recovery
● Avalanche Energy Specified
● SOIC−8 Mounting Information Provided
● Pb−Free Package is Available
APPLICATIONS
● Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA CardsMAXIMUM RATINGS
Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 3) Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (N...