NTT2016N065M3S Description
Silicon Carbide (SiC) MOSFET - EliteSiC, 16 mohm, 650 V, M3S, T2PAK NTT2016N065M3S.
NTT2016N065M3S Key Features
- Typical RDS(on) = 16 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 100 nC)
- High Speed Switching with Low Capacitance (Coss = 208 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a