onsemi PZT65
HIGH CURRENT NPN SILICON TRANSISTOR
| Part No. | PZT65 |
|---|---|
| Datasheet | PZT65 Download |
| Manufacturer |  onsemi |
| Description | HIGH CURRENT NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 60 80 5.0 2.0 0.8 6.4 – 65 to 150 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C °C DEVICE MARKING 651 THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction–to–Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 156 260 10 Unit °C/W °C Sec 1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint. Preferred devices are Motorola recommended choices for future use and best overall value. Thermal Clad is a trademark of the Bergquist Company REV 1 © Motorola, Inc. 1996 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 PZT651T1ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) C...
