onsemi PZT651
NPN Silicon Planar Epitaxial Transistor
| Part No. | PZT651 |
|---|---|
| Datasheet | PZT651 Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Planar Epitaxial Transistor |
| Buy | Stock & Price |
FEATURES
● High Current● The SOT−223 Package can be Soldered Using Wave or Reflow
● PNP Complement is PZT751T1G
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C VCEO VCBO VEBO IC PD 60 Vdc 80 Vdc 5.0 Vdc 2.0 Adc W 0.8 6.4 mW/°C Storage Temperature Range Junction Temperature THERMAL CHARACTERISTICS Tstg − 65 to 150 °C TJ 150 °C Characteristic Symbol Max Unit Thermal Resistance from Junction−to−Ambient in Free Air RqJA 156 °C/W Maximum Temperature for Soldering TL 260 °C Purposes Time in Solder Bath 10 Sec Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
