onsemi PZTA42T1
High Voltage Transistor
| Part No. | PZTA42T1 |
|---|---|
| Datasheet | PZTA42T1 Download |
| Manufacturer |  onsemi |
| Description | High Voltage Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING P1D THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient(1) Symbol VCEO VCBO VEBO IC PD Tstg TJ Symbol RθJA Value 300 300 6.0 500 1.5 –65 to +150 150 Max 83.3 Unit Vdc Vdc Vdc mAdc Watts °C °C Unit °C/W PZTA42T1 ON Semiconductor Preferred Device SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E-04, STYLE 1 TO-261AA COLLECTOR 2,4 BASE 1 EMITTER 3ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 — Vdc Collector-Base Breakdown Voltage (I
