PZTA92T1 Datasheet PDF

MAXIMUM RATINGS

Rating Symbol BASE 1 EMITTER 3 Value Unit SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING VCEO VCBO VEBO IC PD Tstg TJ –300 –300 –5.0 –500 1.5 –65 to +150 150 Vdc Vdc Vdc mAdc Watts °C °C 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA P2D THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance from Junction to Ambient(1) RθJA 83.3 °C/W

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter–B