onsemi PZTA92T1G
High Voltage PNP Silicon Transistor
| Part No. | PZTA92T1G |
|---|---|
| Datasheet | PZTA92T1G Download |
| Manufacturer |  onsemi |
| Description | High Voltage PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Complement to PZTA42T1G● NSV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −300 Vdc Collector−Base Voltage VCBO −300 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500 mAdc Total Power Dissipation up to @ TA = 25C (Note 1) PD W 1.5 Storage Temperature Range Tstg −65 to +150 C Junction Temperature TJ 150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 83.3 C/W 2.
