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RB751S40 Datasheet PDF

onsemi RB751S40

Schottky Barrier Diode

Part No. RB751S40
Datasheet RB751S40 Download
Manufacturer
onsemi
Description Schottky Barrier Diode
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RB751S40 datasheet page 1 preview

FEATURES

● Extremely Fast Switching Speed
● Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc
● Low Reverse Current
● Lead−Free Plating
● NSV Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 30 V Forward Continuous Current (DC) IF 30 mA Peak Forward Surge Current IFSM 500 mA ESD Rating: Class 1C per Human Body Model Class A per Machine Model Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1.
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