onsemi RB751S40
Schottky Barrier Diode
FEATURES
● Extremely Fast Switching Speed● Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc
● Low Reverse Current
● Lead−Free Plating
● NSV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 30 V Forward Continuous Current (DC) IF 30 mA Peak Forward Surge Current IFSM 500 mA ESD Rating: Class 1C per Human Body Model Class A per Machine Model Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1.