onsemi TF410
N-Channel JFET
APPLICATIONS
● Impedance conversion, infrared sensor applicationsFEATURES
● Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)● Small IGSS : max --500pA (VGSS= --20V, VDS=0V)
● Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)
● Halogen free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-003 0.6 0.2 3 TF410-TL-H 0.11 0 to 0.02 0.8 0.1 1...