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TF410 Datasheet PDF

onsemi TF410

N-Channel JFET

Part No. TF410
Datasheet TF410 Download
Manufacturer
onsemi
Description N-Channel JFET
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TF410 datasheet page 1 preview

APPLICATIONS

● Impedance conversion, infrared sensor applications

FEATURES

● Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
● Small IGSS : max --500pA (VGSS= --20V, VDS=0V)
● Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)
● Halogen free compliance Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-003 0.6 0.2 3 TF410-TL-H 0.11 0 to 0.02 0.8 0.1 1...
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