onsemi TIP141
Darlington Complementary Silicon Power Transistors
| Part No. | TIP141 |
|---|---|
| Datasheet | TIP141 Download |
| Manufacturer |  onsemi |
| Description | Darlington Complementary Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V● Collector−Emitter Sustaining Voltage − @ 30 mA VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc (Min) − TIP141, TIP146 = 100 Vdc (Min) − TIP142, TIP147
● Monolithic Construction with Built−In Base−Emitter Shunt Resistor
● These are Pb−Free Devices*
MAXIMUM RATINGS
Symbol Rating TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 Unit VCEO Collector − Emitter Voltage 60 VCB Collector − Base Voltage 60 VEB Emitter − Base Voltage IC Collector Current − Continuous − Peak (Note 1) 80 100 Vdc 80 100 Vdc 5.0 Vdc Adc 10 15 IB Base Current − Continuous 0.5 Adc PD Total Power Dissipation @ TC = 25_C 125 W TJ, Tstg Operating and Storage −65 to +150 _C Junction Temperature Range Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SOT−93 (TO−218) CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package.
