PE42420 Datasheet Text
PE42420
Document category: Product Specification
UltraCMOS® SPDT RF Switch, 20- 6000 MHz
Features
HaRP™ technology enhanced: No gate or phase lag No drift in insertion loss and phase
High linearity: IIP3 of 65 dBm High isolation:
69 dB @ 1 GHz 62 dB @ 3 GHz 50 dB @ 6 GHz Supports +1.8V control logic +125 °C operating temperature High ESD tolerance: 4 kV HBM on RFC 2 kV HBM on all other pins Packaging: 20-lead 4 × 4 mm LGA
Applications
Transmit path switching RF and IF signal routing AGC loops Filter bank switching
Figure 1. PE42420 functional diagram
Product description
The PE42420 is a HaRP™ technology-enhanced absorptive SPDT RF switch designed for use in 3G/4G wireless infrastructure and other high-performance RF applications.
This general-purpose switch consists of two symmetric RF ports with exceptional port-to-port isolation up to 6 GHz. An integrated CMOS decoder provides an easy two-pin, low-voltage CMOS control interface. No external blocking capacitors are required if 0 VDC is present on the RF ports.
The PE42420 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
Product Specification
©2018- 2025, pSemi Corporation. All rights reserved. Headquarters: 9369 Carroll Park Dr, San Diego, CA 92121
DOC-89737-6.01
- (10/2025)
PE42420 UltraCMOS® SPDT RF...
