PE42421
Overview
- 35 dB @ 1000 MHz 0.5 dB @ 2000 MHz Isolation: 30 dB @ 1000 MHz 20 dB @ 2000 MHz Input 1 dB compression point: +33.5 dBm (typical) Minimum power supply voltage: 1.8V Packaging: 6-lead SC-70 Figure
- PE42421 functional block diagram Product description pSemi designed the PE42421 UltraCMOS® RF switch to cover a broad range of applications from 10 MHz through 3000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface which can be controlled using single-pin or complementary-pin control inputs. By using a nominal +3V power supply voltage, a typical input 1 dB compression point of +33.5 dBm can be achieved. pSemi manufactured the PE42421 SPDT RF switch using the pSemi UltraCMOS® process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Product Specification ©2011-2025, pSemi Corporation. All rights reserved. Headquarters: 9369 Carroll Park Dr, San Diego, CA 92121
