FEATURES
Logic control inputs: Single-pin or complementary CMOS Low insertion loss: 0.35 dB @ 1000 MHz 0.5 dB @ 2000 MHz Isolation: 30 dB @ 1000 MHz 20 dB @ 2000 MHz Input 1 dB compression point: +33.5 dBm (typical) Minimum power supply voltage: 1.8V Packaging: 6-lead SC-70 Figure 1. PE42421 functional block diagram Product description pSemi designed pSemi manufactured the PE42421 SPDT RF switch using the pSemi UltraCMOS® process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Product Specification ©2011–2025, pSemi Corporation. All rights reserved. Headquarters: 9369 Carroll Park Dr, San Diego, CA 92121 DOC-33214-1 — (09/2025) PE42421 UltraCMOS® SPDT RF Switch Absolute maximum ratings Exceeding the absolute maximum ratings listed in Table 1 could cause permanent damage. Restrict operation to the limits in Table 2. Operation between the operating range maximum and the absolute maximum for extended periods could reduce reliability.
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