QPD0030 - GaN RF Power Transistor

Product Overview

qorvo

Datasheet Details

Part number	QPD0030
Manufacturer	qorvo
File Size	1.04 MB
Description	GaN RF Power Transistor
Datasheet	QPD0030 Datasheet
Additional preview pages of the QPD0030 datasheet.

Product details

Description

Short Reel 100 Pieces 7” Reel 500 pieces 1.2 1.4 GHz Evaluation Board 1.8 2.2 GHz Evaluation Board 1 of 12 www.qorvo.com QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Parameter Rating Breakdown Voltage (BVDG) +165 V Gate Voltage Range (VG) 7 to +2 V Drain Voltage (VD) +55 V Peak RF Input Power 33 dBm VSWR Mismatch, P1dB Pulse (20% Duty Cycle, 100 µs Width), T = +25°C 10:1 Storage Temperature

Features

Operating Frequency Range: DC to 5 GHz.
Operating Drain Voltage: +48 V.
Maximum Output Power (PSAT): 49.0 W (1).
Maximum Drain Efficiency: 71.9% (1).
Efficiency-Tuned P3dB Gain: 22.1 dB (1).
Surface Mount Plastic Package Functional Block Diagram Notes: 1. Load pull performance at 2.2 GHz.

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Published: Mar 5, 2025 |