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TGF2977-SM - RF Transistor

General Description

QFN Packaged Part 9 10 GHz EVB EAR99 2.6

Datasheet Rev.

12 GHz, 32 V, 5 W GaN RF Transistor Absolute Maximum Ratings1 Recommended Operating Conditions1 Paramet

Key Features

  • Frequency: DC to 12 GHz.
  • Output Power (P3dB)1: 4.8 W.
  • Linear Gain1: 13 dB.
  • Typical PAE3dB1: 50%.
  • Operating Voltage: 32 V.
  • CW and Pulse capable Note 1: @ 9 GHz Load Pull.

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Full PDF Text Transcription for TGF2977-SM (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGF2977-SM. For precise diagrams, and layout, please refer to the original PDF.

Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz and 32 V supply. The device is in an industry standard ove...

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C to 12 GHz and 32 V supply. The device is in an industry standard overmolded package and is ideally suited for avionics, military, marine and weather radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request. TGF2977-SM DC – 12 GHz, 32 V, 5 W GaN RF Transistor 3 x 3mm Package Functional Block Diagram N/C N/C N/C N/C 16 15 14 13 N/C 1 VG, RF IN 2 VG, RF IN 3 N/C 4 12 N/C 11 VD, RF OUT 10 VD, RF OUT 9 N/C 56 7 8 N/C N/C N/C N/C Key Features • Frequency: DC to 12 GHz • Output Power (P3dB)1: 4.

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