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PE0102A - N-Channel Enhancement Mode Power MOSFET

General Description

The PE0102A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,I D =2A RDS(ON) < 230mΩ @ VGS=10V （Typ：190mΩ） PE0102A D G S Schematic diagram.

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Datasheet Details

Part number PE0102A
Manufacturer semi one
File Size 928.34 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE0102A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PE0102A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.