Part PE0106R
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 820.14 KB
semi one
PE0106R

Overview

The PE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

  • VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation