Datasheet4U Logo Datasheet4U.com

PE0106R Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: semi one

Overview: N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number PE0106R
Manufacturer semi one
File Size 820.14 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE0106R-semione.pdf

General Description

The PE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

More Datasheets from semi one

Part Number Description
PE0102A N-Channel Enhancement Mode Power MOSFET
PE01H18T N-Channel Trench Power MOSFET
PE01N85T N-Channel Trench Power MOSFET
PE01P18K P-Channel Enhancement Mode Power MOSFET
PE01P30 P-Channel Enhancement Mode Power MOSFET
PE01P40K P-Channel Enhancement Mode Power MOSFET
PE0053 N-Channel Enhancement Mode Power MOSFET
PE0053A N-Channel Enhancement Mode Power MOSFET
PE0208 N-Channel Enhancement Mode Power MOSFET
PE0213 N-Channel Enhancement Mode Power MOSFET

PE0106R Distributor