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PE0106R - N-Channel Enhancement Mode Power MOSFET

Product Overview

semi one

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PE0106R N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PE0106R

Datasheet Details

Part number	PE0106R
Manufacturer	semi one
File Size	820.14 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE0106R Datasheet
Additional preview pages of the PE0106R datasheet.

Product details

Description

The PE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Dec 3, 2018 |