Part PE01H18T
Description N-Channel Trench Power MOSFET
Category MOSFET
Manufacturer semi one
Size 623.71 KB
semi one
PE01H18T

Overview

The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

  • VDS=100V; ID=118A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V
  • Special Designed for E-Bike Controller Application
  • Ultra Low On-Resistance
  • High UIS and UIS 100% Test