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PE01P30 - P-Channel Enhancement Mode Power MOSFET

General Description

The PE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-100V,ID =-30A RDS(ON).

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Datasheet Details

Part number PE01P30
Manufacturer semi one
File Size 300.68 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE01P30 Datasheet

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P-Channel Enhancement Mode Power MOSFET Description The PE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.