Part PE01P30
Description P-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 300.68 KB
semi one
PE01P30

Overview

The PE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

  • VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance