Datasheet4U Logo Datasheet4U.com

PE01P40K - P-Channel Enhancement Mode Power MOSFET

General Description

The PE01P40K uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -100V, ID = -40A RDS(ON) < 45mΩ @ VGS=-10V RDS(ON) < 55mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE01P40K
Manufacturer semi one
File Size 1.37 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE01P40K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE01P15KA P-Channel Enhancement Mode Power MOSFET Semione
PE01P18KT P-Channel Enhancement Mode Power MOSFET Semione
PE0103A N-Channel Power MOSFET ChipSourceTek
PE013012 General Purpose Relays TE
PE014005 General Purpose Relays TE

Other Datasheets by semi one

Part Number Description
PE01P18K P-Channel Enhancement Mode Power MOSFET
PE01P30 P-Channel Enhancement Mode Power MOSFET
PE0102A N-Channel Enhancement Mode Power MOSFET
PE0106R N-Channel Enhancement Mode Power MOSFET
PE01H18T N-Channel Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The PE01P40K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -100V, ID = -40A RDS(ON) < 45mΩ @ VGS=-10V RDS(ON) < 55mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management PE01P40K Schematic diagram Marking and pin assignment TO-252-2L Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=0.