Part PE0208
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 681.36 KB
semi one
PE0208

Overview

The PE0208 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

  • VDS =200V,ID =16A RDS(ON) <300mΩ @ VGS=10V(Typ:260mΩ)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses