Part PE0213
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 609.17 KB
semi one
PE0213

Overview

The PE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

  • VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation