semi one PE0213
The PE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | PE0213 |
|---|---|
| Datasheet | PE0213 Download |
| Manufacturer |  semi one |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Application
● Boost converters
● LED backlighting
● Uninterruptible power supply PE0213 Schematic diagram TO-220-3L top view
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous ID (100℃) Drain Current-Continuous(TC=100℃) IDM Pulsed Drain Current PD Maximum Power Dissipation Derating factor EAS Single pulse avalanche energy (Note 5) TJ,TSTG Operating Junction and Storage Temperature
