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PE0213 - N-Channel Enhancement Mode Power MOSFET

Description

The PE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 200V,ID =13A RDS(ON).

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Datasheet preview – PE0213

Datasheet Details

Part number PE0213
Manufacturer semi one
File Size 609.17 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE0213 Datasheet
Additional preview pages of the PE0213 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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