PE3400 Datasheet PDF - semi one N-Channel Enhancement Mode Power MOSFET Specs

PE3400 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V S Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment.

Datasheet Details

Part number	PE3400
Manufacturer	semi one
File Size	123.27 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE3400 Datasheet
Additional preview pages of the PE3400 datasheet.

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Full PDF Text Transcription

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PE3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G GENERAL FEATURES ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.

Published: Dec 3, 2018 |